At this week's OFC 2015, the largest global conference and exposition for optical communications, nanoelectronics research center imec, its associated lab at Ghent University (Intec), and Stanford University have demonstrated a compact germanium (Ge) waveguide electro-absorption modulator (EAM) with a modulation bandwidth beyond 50GHz. Combining state-of-the-art extinction ratio and low insertion loss with an ultra-low capacitance of just 10fF, the demonstrated EAM marks an important milestone for the realization of next-generation silicon integrated optical interconnects at 50Gb/s and beyond.
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